1/2 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.06 - rev.b 100ma / 50v digital transistors (with built-in resistor) dtc124tm / dtc124te / DTC124TUA / dtc124tka ? applications inverter, interface, driver ? features 1) built-in bias resistors enable the configur ation of an inverter circuit without c onnecting external input resistors (see equivalent circuit). 2) the bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. they also have the advantage of almost completely eliminating parasitic effects. 3) only the on/off conditions need to be set for operation, making the device design easy. ? structure npn epitaxial planar silicon transistor (resistor built-in type) ? dimensions (unit : mm) rohm : vmt3 rohm : emt3 dtc124tm dtc124te eiaj : sc-75a (1) emitter (2) base (3) collector rohm : umt3 eiaj : sc-70 DTC124TUA (1) emitter (2) base (3) collector rohm : smt3 eiaj : sc-59 dtc124tka (1) emitter (2) base (3) collector each lead has same dimensions each lead has same dimensions abbreviated symbol : 05 abbreviated symbol : 05 abbreviated symbol : 05 abbreviated symbol : 05 (1) base (2) emitter (3) collector (3) 0.32 0.8 1.2 0.13 0.5 0.22 0.4 0.4 1.2 0.8 0.2 0.2 ( 2 ) ( 1 ) 1.6 0.7 0.15 0.1min. 0.55 0.2 1.6 1.0 0.3 0.8 ( 2 ) 0.5 0.5 ( 3 ) 0.2 ( 1 ) 0.2 0.15 0.1min. 0.9 0.7 1.25 2.1 0.3 ( 3 ) 0.65 ( 2 ) 2.0 1.3 ( 1 ) 0.65 ( 2 ) ( 1 ) 2.8 1.6 0.4 ( 3 ) 2.9 1.9 0.95 0.95 0.8 0.15 0.3min. 1.1 ? inner circuit r 1 b r 1 =22k e c b : base c : collector e : emitter
2/2 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.06 - rev.b data sheet dtc124tm / dtc124te / DTC124TUA / dtc124tka ? packaging specifications tl t2l umt3 emt3 vmt3 smt3 dtc124te dtc124tm part no. DTC124TUA 3000 t106 3000 t146 3000 dtc124tka package packaging type code basic ordering unit (pieces) taping taping taping taping 8000 ? ? ? ? ? ? ? ? ? ? ? ? ? absolute maximum ratings (ta=25 ? c) parameter symbol v cbo 50 50 5 100 150 200 150 ? 55 to + 150 dtc124te DTC124TUA dtc124tka v v v ma mw c c v ceo v ebo i c pc tj tstg unit collector-base voltage emitter-base voltage collector-emitter voltage collector current collector power dissipation junction temperature storage temperature dtc124tm limits ? electrical characteristics (ta=25 ? c) parameter symbol bv cbo v ce(sat) v v v v bv ceo bv ebo i cbo i ebo h fe r 1 f t unit collector-base breakdown voltage emitter-base breakdown voltage collector-emitter breakdown voltage collector-emitter saturation voltage collector cutoff current emitter cutoff current dc current transfer ratio input resistance transition frequency min. typ. max. conditions 50 50 5 ? ?? ? ? ? ? ? ? ? ? ? ? ? ?? 100 15.4 250 22 250 0.5 0.5 0.3 600 28.6 a a k mh z i c = 50 a i c /i b = 5ma/0.5ma i e = 50 a v cb = 50v v ce = 5v, i c = 1ma v ce = 10v, i e =? 5ma, f = 100mh z v eb = 4v i c = 1ma ? ? characteristics of built-in transistor ? electrical characteristic curves v ce =5v 100 200 500 1m 2m 5m 10m 20m 50m 100m 1k 500 200 100 50 20 10 5 2 1 collector current : i c (a) dc current gain : h fe fig.1 dc current gain vs. collector current ta=100?c 25?c -40?c 100 200 500 1m 2m 5m 10m 20m 50m 100m 1 500m 200m 100m 50m 20m 10m 5m 2m 1m l c /l b =10 collector current : i c (a) collector saturation voltage : v ce(sat) (v) fig.2 collector-emitter saturation voltage vs. collector current ta=100?c 25?c -40?c
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